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FDD86102 参数 Datasheet PDF下载

FDD86102图片预览
型号: FDD86102
PDF下载: 下载PDF文件 查看货源
内容描述: [N 沟道,屏蔽门极,PowerTrench® MOSFET,100 V,36 A,24 mΩ]
分类和应用: 开关脉冲晶体管
文件页数/大小: 8 页 / 581 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号FDD86102的Datasheet PDF文件第1页浏览型号FDD86102的Datasheet PDF文件第2页浏览型号FDD86102的Datasheet PDF文件第3页浏览型号FDD86102的Datasheet PDF文件第5页浏览型号FDD86102的Datasheet PDF文件第6页浏览型号FDD86102的Datasheet PDF文件第7页浏览型号FDD86102的Datasheet PDF文件第8页  
Typical Characteristics TJ = 25 °C unless otherwise noted  
75  
4
3
2
1
0
VGS = 8 V  
VGS = 10 V  
VGS = 7 V  
VGS = 5 V  
60  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
45  
VGS = 6 V  
VGS = 6 V  
VGS = 7 V  
VGS = 8 V  
45  
30  
15  
VGS = 10 V  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
VGS = 5 V  
0
0
1
2
3
4
5
0
15  
30  
60  
75  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Figure 1. On-Region Characteristics  
Figure2. N o r m a l i z e d O n - R e s i s ta n c e  
vs Drain Current and Gate Voltage  
2.0  
80  
ID = 8 A  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
ID = 8 A  
VGS = 10 V  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
70  
60  
50  
40  
30  
20  
10  
TJ = 125 o  
C
TJ = 25 o  
C
-75 -50 -25  
0
25 50 75 100 125 150  
4
6
8
10  
TJ, JUNCTION TEMPERATURE (oC)  
VGS, GATE TO SOURCE VOLTAGE (V)  
F i gu re 3 . N orma li zed On - Res is ta nc e  
vs Junction Temperature  
Figure4. On-Resistance vs Gate to  
Source Voltage  
75  
100  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
60  
VGS = 0 V  
10  
1
VDS = 5 V  
45  
TJ = 150 o  
C
TJ = 25 oC  
30  
0.1  
TJ = -55 o  
C
TJ = 150 o  
C
15  
0
0.01  
0.001  
TJ = 25 o  
C
TJ = -55 o  
C
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VGS, GATE TO SOURCE VOLTAGE (V)  
VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure6. Source to Drain Diode  
Forward Voltage vs Source Current  
3
www.fairchildsemi.com  
©2012 Fairchild Semiconductor Corporation  
FDD86102 Rev.1.9  
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