Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
2.4
2.0
1.6
1.2
0.9
* Notes :
1. VGS = 0V
0.8
0.4
* Notes :
1. VGS = 10V
2. ID = 250uA
2. ID = 3.8A
0.8
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
o
TJ, Junction Temperature [ C]
o
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
12
30μs
100μs
10
VGS= 10V
10
1ms
8
10ms
DC
6
Operation in This Area
is Limited by R DS(on)
Limited by package
1
4
* Notes :
1. TC = 25oC
2. TJ = 150oC
2
RθJC = 1.5oC/W
3. Single Pulse
0.1
0.1
0
25
1
10
100 300
50
75
100
125
150
o
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
3
1
0.5
0.2
PDM
0.1
t1
0.05
0.1
t2
0.02
0.01
* Notes :
1. ZθJC(t) = 1.5oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
ta
10-2
10-1
1
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©2010 Fairchild Semiconductor Corporation
FDD10N20LZ Rev. C1
4
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