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FDD10N20LZTM 参数 Datasheet PDF下载

FDD10N20LZTM图片预览
型号: FDD10N20LZTM
PDF下载: 下载PDF文件 查看货源
内容描述: [功率 MOSFET,N 沟道,逻辑电平,UniFETTM,200 V,7.6 A,360 mΩ,DPAK]
分类和应用: 开关脉冲晶体管
文件页数/大小: 10 页 / 720 K
品牌: ONSEMI [ ONSEMI ]
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Typical Performance Characteristics  
Figure 1. On-Region Characteristics  
Figure 2. Transfer Characteristics  
20  
30  
VGS = 10V  
7V  
10  
5V  
4.5V  
4V  
10  
3.5V  
150oC  
25oC  
1
1
-55oC  
*Notes:  
1. 250μs Pulse Test  
2. TC = 25oC  
* Notes :  
1. VDS = 20V  
2. 250μs Pulse Test  
0.1  
0.1  
0.1  
1
10  
2
3
4
5
6
VDS, Drain-Source Voltage[V]  
VGS, Gate-Source Voltage[V]  
Figure 3. On-Resistance Variation vs.  
Drain Current and Gate Voltage  
Figure 4. Body Diode Forward Voltage  
Variation vs. Source Current  
and Temperature  
1.0  
50  
0.8  
VGS = 10V  
10  
150oC  
0.6  
25oC  
VGS = 20V  
0.4  
Notes:  
1. VGS = 0V  
* Note : TJ = 25oC  
15 20 25  
2. 250μs Pulse Test  
0.2  
1
0
5
10  
ID, Drain Current [A]  
0.4  
0.8  
1.2  
1.6  
VSD, Body Diode Forward Voltage [V]  
Figure 5. Capacitance Characteristics  
Figure 6. Gate Charge Characteristics  
10  
1000  
Ciss  
8
VDS = 50V  
VDS = 100V  
100  
V
DS = 160V  
Coss  
6
4
2
0
* Note:  
1. VGS = 0V  
Crss  
10  
2. f = 1MHz  
C
C
C
= C + C (C = shorted)  
gs gd ds  
iss  
= C + C  
ds gd  
oss  
rss  
* Note : ID = 7.6A  
9
= C  
gd  
1
0
3
6
12  
0.1  
1
10  
30  
Qg, Total Gate Charge [nC]  
VDS, Drain-Source Voltage [V]  
www.fairchildsemi.com  
©2010 Fairchild Semiconductor Corporation  
FDD10N20LZ Rev. C1  
3
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