November 2013
FDD10N20LZ
N-Channel UniFET MOSFET
200 V, 7.6 A, 360 mΩ
TM
Features
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
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RDS(on) = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A
Low Gate Charge (Typ. 12 nC)
Low Crss (Typ. 11 pF)
100% Avalanche Tested
Improved dv/dt Capability
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•
ESD Improved Capability
RoHS Compliant
Applications
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Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
D
G
G
S
D-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
Parameter
FDD10N20LZTM
Unit
V
Drain to Source Voltage
Gate to Source Voltage
200
±20
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
7.6
ID
Drain Current
A
4.5
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
30
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
121
7.6
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
8.3
mJ
V/ns
W
W/oC
oC
4.5
(TC = 25oC)
- Derate Above 25oC
83
PD
Power Dissipation
0.7
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
oC
Thermal Characteristics
Symbol
Parameter
Unit
FDD10N20LZTM
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
1.5
oC/W
110
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDD10N20LZ Rev. C1
1
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