Philips Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 8.
Characteristics per type; PZU2.4B to PZU5.6B3
T
j
= 25
°
C unless otherwise specified.
PZU
xxx
Sel Working
voltage
V
Z
(V);
I
Z
= 5 mA
Min
2.4
2.7
B
B
2.3
2.5
Max
2.6
2.9
2.75
2.9
3.20
3.05
3.20
3.50
3.35
3.50
3.80
3.65
3.80
4.10
3.97
4.10
4.48
4.21
4.34
4.48
4.90
4.61
4.75
4.90
5.37
5.04
5.20
5.37
5.92
5.55
5.73
5.92
100
40
1
2.5
1.9
275
5.5
250
60
2
1.5
0.3
300
5.5
800
80
2
1
−1.4
325
8
1000
90
3
1
−2.5
350
8
1000
90
3
1
−2.5
370
8
1000
90
5
1
−2.4
390
8
1000
95
5
1
−2.4
410
8
1000
95
10
1
−2.1
425
8
Maximum differential
resistance
r
dif
(Ω)
I
Z
= 0.5 mA I
Z
= 5 mA
1000
1000
100
100
Reverse
current
I
R
(µA)
Max
50
20
Temperature Diode
Non-repetitive peak
coefficient
capacitance reverse current
S
Z
(mV/K);
C
d
(pF)
I
ZSM
(A)
I
Z
= 5 mA
Max
450
440
Max
8
8
−1.6
−2.0
V
R
(V) Typ
1
1
B1 2.5
B2 2.65
3.0
B
2.80
B1 2.80
B2 2.95
3.3
B
3.10
B1 3.10
B2 3.25
3.6
B
3.40
B1 3.40
B2 3.55
3.9
B
3.70
B1 3.70
B2 3.87
4.3
B
4.01
B1 4.01
B2 4.15
B3 4.28
4.7
B
4.42
B1 4.42
B2 4.55
B3 4.69
5.1
B
4.84
B1 4.84
B2 4.98
B3 5.14
5.6
B
5.31
B1 5.31
B2 5.49
B3 5.67
[1]
[2]
f = 1 MHz; V
R
= 0 V
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
PZUXB_SER_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 7 March 2006
4 of 12
PHILIPS [ NXP SEMICONDUCTORS ]
