Philips Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 9.
Characteristics per type; PZU6.2B to PZU36B
…continued
T
j
= 25
°
C unless otherwise specified.
PZU
xxx
Sel Working
voltage
V
Z
(V);
I
Z
= 5 mA
Min
15
B
13.84
B1 13.84
B2 14.34
B3 14.85
16
B
15.37
B1 15.37
B2 15.85
B3 16.35
18
B
16.94
B1 16.94
B2 17.56
B3 18.21
20
B
18.86
B1 18.86
B2 19.52
B3 20.21
22
B
20.88
B1 20.88
B2 21.54
B3 22.23
24
B
22.93
B1 22.93
B2 23.72
B3 24.54
27
30
33
36
[1]
[2]
Maximum differential
resistance
r
dif
(Ω)
I
Z
= 0.5 mA I
Z
= 5 mA
80
15
Reverse
current
I
R
(nA)
Max
50
Temperature Diode
Non-repetitive peak
coefficient
capacitance reverse current
S
Z
(mV/K);
C
d
(pF)
[1]
I
ZSM
(A)
[2]
I
Z
= 5 mA
Max
99
Max
2
11.4
Max
15.52
14.46
14.98
15.52
17.09
16.01
16.51
17.09
19.03
17.70
18.35
19.03
21.08
19.70
20.39
21.08
23.17
21.77
22.47
23.17
25.57
23.96
24.78
25.57
28.9
32
35
38
V
R
(V) Typ
11
80
20
50
12
12.4
97
1.5
80
20
50
13
14.4
93
1.5
100
20
50
15
16.4
88
1.5
100
25
50
17
18.4
84
1.3
120
30
50
19
20.4
80
1.3
B
B
B
B
25.1
28
31
34
150
200
250
300
40
40
40
60
50
50
50
50
21
23
25
27
23.4
26.6
29.7
33.0
73
66
60
59
1
1
0.9
0.8
f = 1 MHz; V
R
= 0 V
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
PZUXB_SER_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 7 March 2006
6 of 12
PHILIPS [ NXP SEMICONDUCTORS ]
