Philips Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 9.
Characteristics per type; PZU6.2B to PZU36B
T
j
= 25
°
C unless otherwise specified.
PZU
xxx
Sel Working
voltage
V
Z
(V);
I
Z
= 5 mA
Min
6.2
B
5.86
B1 5.86
B2 6.06
B3 6.26
6.8
B
6.47
B1 6.47
B2 6.65
B3 6.86
7.5
B
7.06
B1 7.06
B2 7.28
B3 7.52
8.2
B
7.76
B1 7.76
B2 8.02
B3 8.28
9.1
B
8.56
B1 8.56
B2 8.85
B3 9.15
10
B
9.45
B1 9.45
B2 9.77
B3 10.11
11
B
10.44
B1 10.44
B2 10.76
B3 11.10
12
B
11.42
B1 11.42
B2 11.74
B3 12.08
13
B
12.47
B1 12.47
B2 12.91
B3 13.37
14
B2 13.70
Max
6.53
6.12
6.33
6.53
7.14
6.73
6.93
7.14
7.84
7.36
7.60
7.84
8.64
8.10
8.36
8.64
9.55
8.93
9.23
9.55
10.55
9.87
10.21
10.55
11.56
10.88
11.22
11.56
12.60
11.90
12.24
12.60
13.96
13.03
13.49
13.96
14.30
80
10
100
11
10.4
101
2
80
10
100
10
9.4
103
2.5
80
10
100
9
8.4
105
3
60
10
100
8
7.4
108
3
60
10
100
7
6.4
110
3.5
60
10
500
6
5.5
120
3.5
60
10
500
5
4.6
150
3.5
60
10
500
4
4.0
170
3.5
60
20
500
3.5
3.4
215
5.5
Maximum differential
resistance
r
dif
(Ω)
I
Z
= 0.5 mA I
Z
= 5 mA
80
30
Reverse
current
I
R
(nA)
Max
500
Temperature Diode
Non-repetitive peak
coefficient
capacitance reverse current
S
Z
(mV/K);
C
d
(pF)
I
ZSM
(A)
I
Z
= 5 mA
Max
250
Max
5.5
2.7
V
R
(V) Typ
3
PZUXB_SER_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 7 March 2006
5 of 12
PHILIPS [ NXP SEMICONDUCTORS ]
