Philips Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
P
ZSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
forward current
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
Max
200
see
and
40
310
550
150
+150
+150
Unit
mA
-
-
-
-
−65
−65
W
mW
mW
°C
°C
°C
T
amb
≤
25
°C
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min
-
-
-
Typ
-
-
-
Max
400
230
55
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 10 mA
I
F
= 100 mA
[1]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Min
-
-
Typ
-
-
Max
0.9
1.1
Unit
V
V
PZUXB_SER_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 7 March 2006
3 of 12
PHILIPS [ NXP SEMICONDUCTORS ]
