LPC546xx
NXP Semiconductors
32-bit ARM Cortex-M4 microcontroller
[3] Tested in production. VDD = 1.71 V. At hot temperature and below 2.0 V, the supply current could increase slightly because of reduction
of available RBB (reverse body bias) voltage.
Table 17. Static characteristics: Power consumption in deep-sleep and deep power-down modes
Tamb = 40 C to +105 C, unless otherwise specified, 2.7 V VDD 3.6 V.
Symbol Parameter
Conditions
Min Typ[1][2] Max[3] Unit
IDD
supply current Deep-sleep mode; Flash is powered down
SRAMX (32 KB) powered
-
-
23
-
69
A
A
Tamb = 25 C
SRAMX (32 KB) powered
1150
Tamb = 105 C
Deep power-down mode
RTC oscillator input grounded (RTC oscillator
disabled)
-
-
-
464
-
1500
42
nA
A
nA
Tamb = 25 C
RTC oscillator input grounded (RTC oscillator
disabled)
Tamb = 105 C
RTC oscillator running with external crystal
VDD = VDDA= VREFP = 3.3 V, VBAT = 3.0 V
550
-
[1] Typical ratings are not guaranteed. Typical values listed are at room temperature (25 C), VDD = 3.3 V.
[2] Characterized through bench measurements using typical samples.
[3] Tested in production, VDD = 3.6 V.
Table 18. Static characteristics: Power consumption in deep power-down mode
Tamb = 40 C to +105 C, unless otherwise specified, 2.7 V VDD 3.6 V.
Symbol Parameter
Conditions
Min Typ[1][2] Max
Unit
IBAT
battery supply deep power-down mode;
current
RTC oscillator running with external crystal
VDD = VDDA= VREFP = 3.3 V, VBAT = 3.0 V
-
-
0
-
-
nA
nA
VDD = VDDA= VREFP = 0 V or tied to ground, VBAT =
3.0 V
340[3]
[1] Typical ratings are not guaranteed. Typical values listed are at room temperature (25 C).
[2] Characterized through bench measurements using typical samples.
[3] If VBAT> VDD, the external reset pin must be floating to prevent high VBAT leakage.
LPC546xx
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© NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet
Rev. 2.5 — 20 June 2018
92 of 169
NXP [ NXP ]
