NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
1.6
P
tot
(W)
1.2
(2)
(1)
mle311
0.8
(3)
0.4
0
−65
−5
55
115
175
T
amb
(°C)
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
Min
-
-
-
-
Typ
-
-
-
-
Max
200
125
89
15
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
thermal resistance from junction
to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
4 of 13
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