NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
10
3
mle305
−2.4
I
C
(A)
−2.0
I
B
(mA) =
−18.0
−14.4
−10.8
−1.2
−7.2
−0.8
−3.6
−0.4
006aab403
h
FE
−16.2
−12.6
−9.0
−1.6
−5.4
−1.8
10
2
−10
−1
−1
−10
−10
2
−10
3
−10
4
I
C
(mA)
0
0
−1
−2
−3
−4
V
CE
(V)
−5
V
CE
=
−1
V
T
amb
= 25
°C
Fig 3.
BCP69-16: DC current gain as a function of
collector current; typical values
mle304
Fig 4.
BCP69-16: Collector current as a function of
collector-emitter voltage; typical values
mle306
−1000
V
BE
(mV)
−800
−10
3
V
CEsat
(mV)
−10
2
−600
−400
−10
−200
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
I
C
(mA)
−1
−10
−1
−1
−10
−10
2
−10
3
−10
4
I
C
(mA)
V
CE
=
−1
V
I
C
/I
B
= 10
Fig 5.
BCP69-16: Base-emitter voltage as a function
of collector current; typical values
Fig 6.
BCP69-16: Collector-emitter saturation voltage
as a function of collector current; typical
values
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
7 of 13
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