NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
10
3
mle309
−2.4
I
C
(A)
−2.0
I
B
(mA) =
−12.0
006aab404
h
FE
−10.8
−9.6
−7.2
−8.4
−6.0
−3.6
−2.4
−1.6
−1.2
−4.8
−0.8
−0.4
−1.2
10
2
−10
−1
−1
−10
−10
2
−10
3
−10
4
I
C
(mA)
0
0
−1
−2
−3
−4
V
CE
(V)
−5
V
CE
=
−1
V
T
amb
= 25
°C
Fig 7.
BCP69-25: DC current gain as a function of
collector current; typical values
mle304
Fig 8.
BCP69-25: Collector current as a function of
collector-emitter voltage; typical values
mle310
−1000
V
BE
(mV)
−800
−10
3
V
CEsat
(mV)
−10
2
−600
−400
−10
−200
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
I
C
(mA)
−1
−10
−1
−1
−10
−10
2
−10
3
−10
4
I
C
(mA)
V
CE
=
−1
V
I
C
/I
B
= 10
Fig 9.
BCP69-25: Base-emitter voltage as a function
of collector current; typical values
Fig 10. BCP69-25: Collector-emitter saturation voltage
as a function of collector current; typical
values
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
8 of 13
PHILIPS [ NXP SEMICONDUCTORS ]
