NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
BCP69
V
CE
=
−10
V;
I
C
=
−5
mA
V
CE
=
−1
V;
I
C
=
−500
mA
V
CE
=
−1
V; I
C
=
−1
A
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
V
CEsat
V
BE
collector-emitter
saturation voltage
base-emitter voltage
V
CE
=
−1
V;
I
C
=
−500
mA
V
CE
=
−1
V;
I
C
=
−500
mA
V
CE
=
−1
V;
I
C
=
−500
mA
I
C
=
−1
A;
I
B
=
−100
mA
V
CE
=
−10
V;
I
C
=
−5
mA
V
CE
=
−1
V; I
C
=
−1
A
C
c
collector capacitance
V
CB
=
−10
V;
I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
=
−5
V;
I
C
=
−50
mA;
f = 100 MHz
50
85
60
100
140
160
-
-
-
-
-
-
-
-
-
-
-
-
-
28
-
375
-
250
230
375
−500
−700
−1
-
mV
mV
V
pF
Conditions
V
CB
=
−25
V; I
E
= 0 A
V
CB
=
−25
V; I
E
= 0 A;
T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
Min
-
-
-
Typ
-
-
-
Max
−100
−10
−100
Unit
nA
µA
nA
I
EBO
h
FE
f
T
transition frequency
40
140
-
MHz
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
6 of 13
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