NXP Semiconductors
BAV99 series
High-speed switching diodes
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
(1) I
R
= 1 mA
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty cycle
δ
= 0.05
Oscilloscope: rise time t
r
= 0.35 ns
Fig 5.
Reverse recovery time test circuit and waveforms
I
1 kΩ
450
Ω
I
90 %
V
R
S
= 50
Ω
D.U.T.
OSCILLOSCOPE
R
i
= 50
Ω
10 %
t
t
r
t
p
input signal
VFR
t
output signal
mga882
Input signal: forward pulse rise time t
r
= 20 ns; forward current pulse duration t
p
≥
100 ns; duty cycle
δ ≤
0.005
Fig 6.
Forward recovery voltage test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
BAV99_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 14 April 2010
6 of 14
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