NXP Semiconductors
BAV99 series
High-speed switching diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
repetitive peak reverse
voltage
reverse voltage
forward current
BAV99
BAV99S
BAV99W
I
FRM
I
FSM
repetitive peak forward
current
non-repetitive peak
forward current
square wave
t
p
= 1
μs
t
p
= 1 ms
t
p
= 1 s
P
tot
total power dissipation
BAV99
BAV99S
BAV99W
Per device
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
Max
100
100
215
125
200
150
130
500
Unit
V
V
mA
mA
mA
mA
mA
mA
-
-
-
-
4
1
0.5
250
250
200
150
+150
+150
A
A
A
mW
mW
mW
°C
°C
°C
T
amb
≤
25
°C
T
amb
≤
85
°C
T
amb
≤
25
°C
-
-
-
−65
−65
junction temperature
ambient temperature
storage temperature
Single diode loaded.
Double diode loaded.
T
j
= 25
°C
prior to surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Soldering points at pins 2, 3, 5 and 6.
BAV99_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 14 April 2010
3 of 14
PHILIPS [ NXP SEMICONDUCTORS ]
