NXP Semiconductors
BAV99 series
High-speed switching diodes
10
3
I
F
(mA)
10
2
006aab132
10
2
I
R
(μA)
10
1
10
−1
(1)
006aab133
(2)
10
10
−2
(1)
(2)
(3)
(4)
(3)
1
10
−3
10
−4
(4)
10
−1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(V)
10
−5
0
20
40
60
80
V
R
(V)
100
(1) T
amb
= 150
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
(1) T
amb
= 150
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
mbg446
Fig 2.
Reverse current as a function of reverse
voltage; typical values
mbg704
0.8
C
d
(pF)
0.6
10
2
I
FSM
(A)
10
0.4
1
0.2
0
0
4
8
12
V
R
(V)
16
10
−1
1
10
10
2
10
3
t
p
(μs)
10
4
f = 1 MHz; T
amb
= 25
°C
Based on square wave currents.
T
j
= 25
°C;
prior to surge
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
BAV99_SER_7
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 14 April 2010
5 of 14
PHILIPS [ NXP SEMICONDUCTORS ]
