TYPICAL CHARACTERISTICS
100
10
1.11
1.08
Measured with 30 mV (rms) ac @ 1 MHz
= 0 Vdc
V
= 50 Vdc
DD
V
GS
I
= 100 mA
DQ(A+B)
1.05
500 mA
1.02
0.99
0.96
0.93
0.90
1000 mA
C
rss
1
0
10
V
20
30
40
50
–75
–50
–25
0
25
50
75
100
, DRAIN--SOURCE VOLTAGE (VOLTS)
T , CASE TEMPERATURE (C)
DS
C
Note: Each side of device measured separately.
I
(mA)
Slope (mV/C)
DQ
100
–2.73
Figure 2. Capacitance versus Drain--Source Voltage
500
–2.39
–2.09
1500
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
9
10
V
= 50 Vdc
DD
I
D
= 19.67 Amps
28.40 Amps
8
10
10
7
24.39 Amps
6
5
4
10
10
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Figure 4. MTTF versus Junction Temperature – Pulse
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
4
NXP [ NXP ]
