Document Number: AFV10700H
Rev. 1, 01/2018
NXP Semiconductors
Technical Data
RF Power LDMOS Transistors
AFV10700H
AFV10700HS
AFV10700GS
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for pulse applications operating at
1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at
reduced power. These devices are suitable for use in defense and commercial
pulse applications with large duty cycles and long pulses, such as IFF,
secondary surveillance radars, ADS--B transponders, DME and other complex
pulse chains.
1030–1090 MHz, 700 W PEAK, 52 V
AIRFAST RF POWER LDMOS
TRANSISTORS
Typical Performance: In 1030–1090 MHz reference circuit, I
= 100 mA
DQ(A+B)
V
(V)
P
out
(W)
Frequency
(MHz)
G
(dB)
D
(%)
DD
ps
(1)
Signal Type
1030
1090
1030
1090
50
800 Peak
700 Peak
850 Peak
770 Peak
17.5
19.0
17.5
19.2
52.1
56.1
51.7
56.1
Pulse
(128 sec,
10% Duty Cycle)
52
NI--780H--4L
AFV10700H
Typical Performance: In 1030 MHz narrowband production test fixture,
= 100 mA
I
DQ(A+B)
V
(V)
P
out
(W)
Frequency
(MHz)
G
(dB)
(%)
DD
ps
D
Signal Type
(2)
1030
50
730 Peak
19.2
58.5
Pulse
NI--780S--4L
AFV10700HS
(128 sec,
10% Duty Cycle)
Narrowband Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
(2)
1030
Pulse
(128 sec,
10% Duty Cycle)
> 20:1 at
All Phase
Angles
17.2 Peak
(3 dB
Overdrive)
50
No Device
Degradation
NI--780GS--4L
AFV10700GS
1. Measured in 1030–1090 MHz reference circuit (page 5).
2. Measured in 1030 MHz narrowband production test fixture (page 9).
Features
Internally input and output matched for broadband operation and ease of use
Device can be used in a single--ended, push--pull or quadrature configuration
Qualified up to a maximum of 55 VDD operation
Gate A
Gate B
Drain A
Drain B
3
4
1
2
High ruggedness, handles > 20:1 VSWR
Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation and gate voltage pulsing
Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)
(Top View)
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2017–2018 NXP B.V.
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
1
NXP [ NXP ]
