TYPICAL CHARACTERISTICS – 1030–1090 MHz
REFERENCE CIRCUIT
21
70
60
1090 MHz
1090 MHz
1030 MHz
20
19
18
17
G
ps
D
50
40
30
20
1030 MHz
16
15
V
= 50 Vdc, I
= 100 mA
DD
DQ(A+B)
Pulse Width = 128 sec, Duty Cycle = 10%
10
0
100 200 300 400 500 600 700 800 900 1000
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 6. Power Gain and Drain Efficiency versus
Output Power – 50 V
70
21
1090 MHz
1030 MHz
1090 MHz
60
50
40
30
20
10
20
19
G
ps
D
1030 MHz
18
17
16
15
V
= 52 Vdc, I
= 100 mA
DD
DQ(A+B)
Pulse Width = 128 sec, Duty Cycle = 10%
0
200
400
600
800
1000
1200
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 7. Power Gain and Drain Efficiency versus
Output Power – 52 V
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
7
NXP [ NXP ]
