Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) V = 50 Vdc, I
= 100 mA, P = 730 W Peak
DD
DQ(A+B)
out
(73 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
G
18.0
19.2
58.5
21.0
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
54.5
—
IRL
–15
–9
dB
Load Mismatch/Ruggedness (In NXP Narrowband Production Test Fixture, 50 ohm system) I
= 100 mA
DQ(A+B)
Frequency
(MHz)
Signal
Type
P
in
(W)
VSWR
Test Voltage, V
Result
DD
1030
Pulse
> 20:1 at All Phase Angles
17.2 Peak
50
No Device Degradation
(128 sec,
(3 dB Overdrive)
10% Duty Cycle)
Table 5. Ordering Information
Device
Tape and Reel Information
Package
AFV10700HR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--780H--4L
NI--780S--4L
NI--780GS--4L
AFV10700HSR5
AFV10700GSR5
R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
3
NXP [ NXP ]
