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AFV10700HS 参数 Datasheet PDF下载

AFV10700HS图片预览
型号: AFV10700HS
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Power LDMOS Transistors]
分类和应用:
文件页数/大小: 19 页 / 709 K
品牌: NXP [ NXP ]
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Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
C  
Drain--Source Voltage  
V
–0.5, +105  
–6.0, +10  
55, +0  
DSS  
Gate--Source Voltage  
V
GS  
DD  
Operating Voltage  
V
Storage Temperature Range  
Case Operating Temperature Range  
T
stg  
65 to +150  
–55 to +150  
–55 to +225  
T
C
C  
(1,2)  
Operating Junction Temperature Range  
T
J
C  
Total Device Dissipation @ T = 25C  
P
526  
W
C
D
Derate above 25C  
2.63  
W/C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Impedance, Junction to Case  
Z
0.030  
C/W  
JC  
Pulse: Case Temperature 75C, 730 W Peak, 128 sec Pulse Width,  
10% Duty Cycle, 50 Vdc, I  
= 100 mA, 1030 MHz  
DQ(A+B)  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22--A114)  
Charge Device Model (per JESD22--C101)  
2, passes 2000 V  
C3, passes 2000 V  
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
(4)  
Off Characteristics  
Gate--Source Leakage Current  
I
105  
1
1
Adc  
Vdc  
GSS  
(V = 5 Vdc, V = 0 Vdc)  
GS  
DS  
Drain--Source Breakdown Voltage  
(V = 0 Vdc, I = 10 A)  
V
(BR)DSS  
GS  
D
Zero Gate Voltage Drain Leakage Current  
(V = 50 Vdc, V = 0 Vdc)  
I
Adc  
Adc  
DSS  
DSS  
DS  
GS  
Zero Gate Voltage Drain Leakage Current  
I
10  
(V = 105 Vdc, V = 0 Vdc)  
DS  
GS  
On Characteristics  
(4)  
Gate Threshold Voltage  
(V = 10 Vdc, I = 260 Adc)  
V
V
1.3  
1.6  
1.8  
2.1  
2.3  
2.6  
Vdc  
Vdc  
Vdc  
GS(th)  
GS(Q)  
DS(on)  
DS  
D
Gate Quiescent Voltage  
(V = 50 Vdc, I  
= 100 mAdc, Measured in Functional Test)  
DQ(A+B)  
DD  
(4)  
Drain--Source On--Voltage  
V
0.28  
(V = 10 Vdc, I = 2.6 Adc)  
GS  
D
(4,5)  
Dynamic Characteristics  
Reverse Transfer Capacitance  
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
C
rss  
1.16  
pF  
DS  
GS  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.nxp.com/RF/calculators.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.  
4. Each side of device measured separately.  
5. Part internally matched both on input and output.  
(continued)  
AFV10700H AFV10700HS AFV10700GS  
RF Device Data  
NXP Semiconductors  
2