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A2T09D400-23NR6 参数 Datasheet PDF下载

A2T09D400-23NR6图片预览
型号: A2T09D400-23NR6
PDF下载: 下载PDF文件 查看货源
内容描述: [N--Channel Enhancement--Mode Lateral MOSFET]
分类和应用:
文件页数/大小: 15 页 / 443 K
品牌: NXP [ NXP ]
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Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)  
A
Characteristic  
Symbol  
Min  
Typ  
= 1200 mA, V = 1.12 Vdc,  
GSB  
Max  
Unit  
(1,2)  
Functional Tests – 776 MHz  
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I  
DD  
DQA  
P
= 93 W Avg., f = 776 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.  
out  
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.  
Power Gain  
G
16.5  
43.5  
6.8  
17.8  
45.9  
7.0  
19.0  
dB  
ps  
D
Drain Efficiency  
%
dB  
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF  
PAR  
Adjacent Channel Power Ratio  
ACPR  
–36.8  
–34.7  
dBc  
(1,2)  
Functional Tests – 836 MHz  
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I  
= 1200 mA, V = 1.12 Vdc,  
GSB  
DD  
DQA  
P
= 93 W Avg., f = 836 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.  
out  
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.  
Power Gain  
G
16.5  
43.5  
6.8  
17.9  
48.0  
7.1  
19.0  
dB  
%
ps  
D
Drain Efficiency  
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF  
PAR  
dB  
dBc  
Adjacent Channel Power Ratio  
ACPR  
–37.1  
–34.7  
(2)  
Load Mismatch  
(In Freescale Doherty Test Fixture, 50 ohm system) I  
= 1200 mA, V  
= 1.12 Vdc, f = 806 MHz, 12 sec(on),  
GSB  
DQA  
10% Duty Cycle  
VSWR 10:1 at 32 Vdc, 497 W Pulsed CW Output Power  
(3 dB Input Overdrive from 400 W Pulsed CW Rated Power)  
No Device Degradation  
(2)  
Typical Performance  
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I  
= 1200 mA, V = 1.12 Vdc,  
GSB  
DD  
DQA  
776–836 MHz Bandwidth  
P
P
@ 1 dB Compression Point, CW  
P1dB  
P3dB  
400  
540  
–7.1  
W
W
out  
out  
(3)  
@ 3 dB Compression Point  
AM/PM  
(Maximum value measured at the P3dB compression point across  
the 776–836 MHz bandwidth)  
VBW Resonance Point  
VBW  
35  
MHz  
res  
(IMD Third Order Intermodulation Inflection Point)  
Gain Flatness in 60 MHz Bandwidth @ P = 93 W Avg.  
G
0.3  
dB  
out  
F
Gain Variation over Temperature  
G  
0.01  
dB/C  
(--30C to +85C)  
Output Power Variation over Temperature  
P1dB  
0.01  
dB/C  
(--30C to +85C)  
Table 6. Ordering Information  
Device  
Tape and Reel Information  
Package  
A2T09D400--23NR6  
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel  
OM--1230--4L2S  
1. Part internally matched both on input and output.  
2. Measurements made with device in an asymmetrical Doherty configuration.  
3. P3dB = P  
+ 7.0 dB where P  
is the average output power measured using an unclipped W--CDMA single--carrier input signal where  
avg  
avg  
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.  
A2T09D400--23NR6  
RF Device Data  
Freescale Semiconductor, Inc.  
3
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