Table 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
= 28 Vdc, I = 1442 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
67.8
63.8
60.4
67.7
68.1
67.8
Gain (dB)
(dBm)
(W)
(MHz)
728
1.29 – j2.52
1.36 – j2.68
1.53 – j2.97
1.61 – j3.18
1.71 – j3.34
1.76 – j3.51
1.19 + j2.57
2.14 – j0.27
1.85 – j0.46
2.11 – j0.11
2.25 + j0.30
1.92 + j0.22
1.76 + j0.02
20.3
52.1
164
–12
–13
–5
748
768
790
806
822
1.29 + j2.66
1.35 + j2.86
1.43 + j3.08
1.50 + j3.24
1.62 + j3.39
19.7
20.2
20.7
20.4
20.1
52.3
51.4
51.1
51.4
51.7
169
138
129
138
147
–12
–14
–13
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
69.5
66.0
66.5
70.2
69.6
69.4
Gain (dB)
(dBm)
(W)
(MHz)
728
748
768
790
806
822
1.29 – j2.52
1.11 + j2.65
2.52 – j0.44
1.78 – j0.52
3.21 – j0.14
2.35 – j0.16
2.14 – j0.09
2.00 – j0.02
18.6
52.4
173
–19
–19
–13
–16
–19
–20
1.36 – j2.68
1.53 – j2.97
1.61 – j3.18
1.71 – j3.34
1.76 – j3.51
1.20 + j2.75
1.30 + j3.03
1.39 + j3.19
1.46 + j3.36
1.54 + j3.53
17.6
19.3
18.6
18.4
18.3
53.2
51.3
52.2
52.2
52.1
210
134
168
168
164
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
8
NXP [ NXP ]
