Document Number: A2T09D400--23N
Rev. 0, 3/2016
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 93 W symmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications covering the frequency range of 716 to
960 MHz.
A2T09D400--23NR6
800 MHz
716–960 MHz, 93 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 1200 mA, VGSB = 1.12 Vdc, Pout = 93 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
776 MHz
806 MHz
836 MHz
(dB)
17.8
18.2
17.9
(%)
45.9
46.8
48.0
7.0
7.2
7.1
–36.8
–37.8
–37.1
Features
OM--1230--4L2S
PLASTIC
Production Tested in a Symmetrical Doherty Configuration
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
(1)
Designed for Digital Predistortion Error Correction Systems
6
5
VBW
A
Carrier
RF /V
1
2
RF /V
outA DSA
inA GSA
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
(1)
VBW
B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
1. Device cannot operate with V current
DD
supplied through pin 3 and pin 6.
Freescale Semiconductor, Inc., 2016. All rights reserved.
A2T09D400--23NR6
RF Device Data
Freescale Semiconductor, Inc.
1
NXP [ NXP ]
