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M29W400DT70ZA1 参数 Datasheet PDF下载

M29W400DT70ZA1图片预览
型号: M29W400DT70ZA1
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512 KB ×8或256 KB ×16 ,引导块) 3 V电源闪存 [4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory]
分类和应用: 闪存
文件页数/大小: 48 页 / 1025 K
品牌: NUMONYX [ NUMONYX B.V ]
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Command interface  
M29W400DT, M29W400DB  
will be suspended. If the Erase Suspend command is issued during the period when the  
memory is waiting for an additional block (before the Program/Erase controller starts) then  
the Erase is suspended immediately and will start immediately when the Erase Resume  
command is issued. It is not possible to select any further blocks to erase after the Erase  
Resume.  
During Erase Suspend it is possible to Read and Program cells in blocks that are not being  
erased; both Read and Program operations behave as normal on these blocks. If any  
attempt is made to program in a protected block or in the suspended block then the Program  
command is ignored and the data remains unchanged. The Status Register is not read and  
no error condition is given. Reading from blocks that are being erased will output the Status  
Register.  
It is also possible to issue the Auto Select and Unlock Bypass commands during an Erase  
Suspend. The Read/Reset command must be issued to return the device to Read Array  
mode before the Resume command will be accepted.  
4.10  
4.11  
Erase Resume command  
The Erase Resume command must be used to restart the Program/Erase controller from  
Erase Suspend. An erase can be suspended and resumed more than once.  
Block Protect and Chip Unprotect commands  
Each block can be separately protected against accidental program or erase. The whole  
chip can be unprotected to allow the data inside the blocks to be changed.  
Block Protect and Chip Unprotect operations are described in Appendix B: Block protection.  
Table 4.  
Program, Erase times and Program, Erase endurance cycles  
Parameter  
Min  
Typ(1)(2)  
Max(2)  
Unit  
Chip Erase (all bits in the memory set to ‘0’)  
Chip Erase  
2.5  
6
s
35(3)  
6(4)  
s
s
Block Erase (64 Kbytes)  
Program (byte or word)  
0.8  
10  
5.5  
2.8  
18  
200(3)  
30(3)  
15(3)  
25(4)  
µs  
Chip Program (byte by byte)  
Chip Program (word by word)  
Erase Suspend latency time  
Program/Erase cycles (per block)  
Data retention  
s
s
µs  
100,000  
20  
cycles  
years  
1. Typical values measured at room temperature and nominal voltages.  
2. Sampled, but not 100% tested.  
3. Maximum value measured at worst case conditions for both temperature and VCC after 100,000  
Program/Erase cycles.  
4. Maximum value measured at worst case conditions for both temperature and VCC  
.
22/48  
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