DC and AC parameters
M25P20
Table 14. DC Characteristics (Device Grade 3)
Test Condition (in addition to
Symbol
Parameter
Min.(1) Max.(1) Unit
those in Table 10)
ILI
Input Leakage Current
Output Leakage Current
Standby Current
2
2
µA
µA
µA
µA
ILO
ICC1
ICC2
S = VCC, VIN = VSS or VCC
S = VCC, VIN = VSS or VCC
100
50
Deep Power-down Current
C = 0.1VCC / 0.9.VCC at 25MHz,
Q = open
8
4
mA
mA
ICC3
Operating Current (READ)
C = 0.1VCC / 0.9.VCC at 20MHz,
Q = open
ICC4
ICC5
ICC6
ICC7
VIL
Operating Current (PP)
Operating Current (WRSR)
Operating Current (SE)
Operating Current (BE)
Input Low Voltage
S = VCC
S = VCC
S = VCC
S = VCC
15
15
mA
mA
mA
mA
V
15
15
– 0.5
0.3VCC
VIH
Input High Voltage
0.7VCC VCC+0.4
0.4
V
VOL
Output Low Voltage
IOL = 1.6 mA
V
VCC
0.2
–
VOH
Output High Voltage
IOH = –100 μA
V
2. This is preliminary data
Table 15. Instruction Times (Device Grade 6)
Test conditions specified in Table 10 and Table 17
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
tW
Write Status Register Cycle Time
5
15
ms
Page Program Cycle Time (256 Bytes)
1.4
(1)
tPP
5
ms
0.4+
n*1/256
Page Program Cycle Time (n Bytes)
tSE
tBE
Sector Erase Cycle Time
Bulk Erase Cycle Time
0.8
2.5
3
6
s
s
1. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1 ≤n ≤
256)
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