DC and AC parameters
M25P20
Table 18. AC Characteristics (25MHz Operation, Device Grade 6 or 3)
Test conditions specified in Table 10 and Table 17
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
Clock Frequency for the following
fC
fR
fC
instructions: FAST_READ, PP, SE, BE,
DP, RES, WREN, WRDI, RDSR, WRSR
D.C.
25
20
MHz
Clock Frequency for READ instructions
Clock High Time
D.C.
18
18
0.1
0.1
10
10
5
MHz
ns
(1)
tCH
tCLH
tCLL
(1)
tCL
Clock Low Time
ns
(2)
tCLCH
Clock Rise Time(3) (peak to peak)
Clock Fall Time(3) (peak to peak)
S Active Setup Time (relative to C)
S Not Active Hold Time (relative to C)
Data In Setup Time
V/ns
V/ns
ns
(2)
tCHCL
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL
tCSS
ns
tDSU
tDH
ns
Data In Hold Time
5
ns
S Active Hold Time (relative to C)
S Not Active Setup Time (relative to C)
S Deselect Time
10
10
100
ns
ns
tCSH
tDIS
tV
ns
(2)
tSHQZ
Output Disable Time
15
15
ns
tCLQV
tCLQX
tHLCH
tCHHH
tHHCH
tCHHL
Clock Low to Output Valid
Output Hold Time
ns
tHO
0
ns
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD to Output Low-Z
10
10
10
10
ns
ns
ns
ns
(2)
tHHQX
tLZ
15
20
ns
(2)
tHLQZ
tHZ
HOLD to Output High-Z
ns
(4)
tWHSL
Write Protect Setup Time
Write Protect Hold Time
20
ns
(4)
tSHWL
100
ns
(2)
tDP
S High to Deep Power-down Mode
3
µs
S High to Standby Mode without
Electronic Signature Read
(2)
tRES1
3 or 30(5)
µs
S High to Standby Mode with Electronic
Signature Read
1.8 or 30(5)
µs
(2)
tRES2
1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5. It is 30µs in devices produced with the “X” process technology (grade 3 devices are only produced using
the “X” process technology). Details of how to find the process letter on the device marking are given in the
Application note AN1995.
40/50
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