M25P20
DC and AC parameters
Table 19. AC Characteristics (40MHz Operation, Device Grade 6)
40MHz available for products marked since week 20 of 2004, only(1)
Test conditions specified in Table 10 and Table 17
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
Clock Frequency for the following
fC
fR
fC
instructions: FAST_READ, PP, SE, BE,
DP, RES, WREN, WRDI, RDSR, WRSR
D.C.
40
20
MHz
Clock Frequency for READ instructions
Clock High Time
D.C.
11
11
0.1
0.1
5
MHz
ns
(2)
tCH
tCLH
tCLL
(2)
tCL
Clock Low Time
ns
(3)
tCLCH
Clock Rise Time(4) (peak to peak)
Clock Fall Time(4) (peak to peak)
S Active Setup Time (relative to C)
S Not Active Hold Time (relative to C)
Data In Setup Time
V/ns
V/ns
ns
(3)
tCHCL
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL
tCSS
5
ns
tDSU
tDH
2
ns
Data In Hold Time
5
ns
S Active Hold Time (relative to C)
S Not Active Setup Time (relative to C)
S Deselect Time
5
ns
5
ns
tCSH
tDIS
tV
100
ns
(3)
tSHQZ
Output Disable Time
9
9
ns
tCLQV
tCLQX
tHLCH
tCHHH
tHHCH
tCHHL
Clock Low to Output Valid
Output Hold Time
ns
tHO
0
5
5
5
5
ns
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD to Output Low-Z
ns
ns
ns
ns
(3)
tHHQX
tLZ
9
9
ns
(3)
tHLQZ
tHZ
HOLD to Output High-Z
ns
(5)
tWHSL
Write Protect Setup Time
Write Protect Hold Time
20
ns
(5)
tSHWL
100
ns
(3)
tDP
S High to Deep Power-down Mode
3
μs
S High to Standby Mode without
Electronic Signature Read
(3)
tRES1
3 or 30(6)
μs
μs
S High to Standby Mode with Electronic
Signature Read
(3)
tRES2
1.8 or 30(6)
1. Details of how to find the date of marking are given in Application Note, AN1995.
2. tCH + tCL must be greater than or equal to 1/ fC
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
6. It is 30µs in devices produced with the “X” process technology. Details of how to find the process letter on
the device marking are given in the Application note AN1995.
41/50