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M25P10-AVMB6TP/Y 参数 Datasheet PDF下载

M25P10-AVMB6TP/Y图片预览
型号: M25P10-AVMB6TP/Y
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位,串行闪存, 50MHz的SPI总线接口 [1 Mbit, serial Flash memory, 50 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路时钟
文件页数/大小: 51 页 / 989 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters  
M25P10-A  
10  
DC and AC parameters  
This section summarizes the operating and measurement conditions, and the DC and AC  
characteristics of the device. The parameters in the DC and AC characteristic tables that  
follow are derived from tests performed under the measurement conditions summarized in  
the relevant tables. Designers should check that the operating conditions in their circuit  
match the measurement conditions when relying on the quoted parameters.  
Table 10. Operating conditions  
Symbol  
Parameter  
Min  
Max  
Unit  
VCC  
Supply voltage  
2.3(1)  
–40  
3.6  
85  
V
Ambient operating temperature (device grade 6)  
Ambient operating temperature (device grade 3)  
TA  
°C  
–40  
125  
1. Only in products with process technology code Y. In products with process technology code X, Vcc(min) is  
2.7 V.  
Table 11. Data retention and endurance  
Parameter  
Condition  
Device grade 6  
Min  
Max  
Unit  
100,000  
10,000  
20  
Erase/Program  
cycles  
cycles per sector  
years  
Device grade 3  
at 55 °C  
Data retention  
Table 12. AC measurement conditions  
Symbol  
Parameter  
Min  
Max  
Unit  
CL  
Load capacitance  
30  
pF  
ns  
V
Input rise and fall times  
5
Input pulse voltages  
0.2VCC to 0.8VCC  
0.3VCC to 0.7VCC  
Input timing reference voltages  
Output timing reference voltages  
V
V
CC / 2  
V
1. Output Hi-Z is defined as the point where data out is no longer driven.  
Figure 21. AC measurement I/O waveform  
Input levels  
Input and output  
timing reference levels  
0.8V  
CC  
0.7V  
0.5V  
0.3V  
CC  
CC  
CC  
0.2V  
CC  
AI07455  
36/51  
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