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M25P10-AVMB6TP/Y 参数 Datasheet PDF下载

M25P10-AVMB6TP/Y图片预览
型号: M25P10-AVMB6TP/Y
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位,串行闪存, 50MHz的SPI总线接口 [1 Mbit, serial Flash memory, 50 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路时钟
文件页数/大小: 51 页 / 989 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters  
Symbol  
M25P10-A  
(1)  
Table 15. DC characteristics (device grade 3)  
Test condition (in addition to  
Parameter  
Min(2)  
Max(2) Unit  
those in Table 10)  
ILI  
Input Leakage current  
Output Leakage current  
Standby current  
2
2
µA  
µA  
µA  
µA  
ILO  
ICC1  
ICC2  
S = VCC, VIN = VSS or VCC  
S = VCC, VIN = VSS or VCC  
100  
50  
Deep Power-down current  
C = 0.1VCC / 0.9.VCC at 25 MHz,  
Q = open  
8
4
mA  
mA  
ICC3  
Operating current (READ)  
C = 0.1VCC / 0.9.VCC at 20 MHz,  
Q = open  
ICC4  
ICC5  
ICC6  
ICC7  
VIL  
Operating current (PP)  
Operating current (WRSR)  
Operating current (SE)  
Operating current (BE)  
Input Low voltage  
S = VCC  
S = VCC  
S = VCC  
S = VCC  
15  
15  
mA  
mA  
mA  
mA  
V
15  
15  
–0.5  
0.3VCC  
VIH  
Input High voltage  
0.7VCC VCC+0.4  
0.4  
V
VOL  
VOH  
Output Low voltage  
Output High voltage  
IOL = 1.6 mA  
V
IOH = –100 μA  
VCC–0.2  
V
1. Only for products with process technology code X.  
2. Preliminary data.  
Table 16. Instruction times (device grade 6)  
Test conditions specified in Table 10 and Table 12  
Symbol Alt.  
Parameter  
Min  
Typ  
Max  
Unit  
tW  
Write Status Register cycle time  
5
15  
ms  
Page Program cycle time (256 bytes)  
1.4  
(1)  
tPP  
5
ms  
0.4+  
Page Program cycle time (n bytes)  
n*1/256(2)  
tSE  
tBE  
Sector Erase cycle time  
Bulk Erase cycle time  
0.65  
1.7  
3
6
s
s
1. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are  
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 n ≤  
256).  
2. tPP=2μs+8μs*[int(n-1)/2+1]+4μs*[int(n-1)/2]+2μs, in products with process technology code X and Y.  
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