DC and AC parameters
Symbol
M25P10-A
(1)
Table 15. DC characteristics (device grade 3)
Test condition (in addition to
Parameter
Min(2)
Max(2) Unit
those in Table 10)
ILI
Input Leakage current
Output Leakage current
Standby current
2
2
µA
µA
µA
µA
ILO
ICC1
ICC2
S = VCC, VIN = VSS or VCC
S = VCC, VIN = VSS or VCC
100
50
Deep Power-down current
C = 0.1VCC / 0.9.VCC at 25 MHz,
Q = open
8
4
mA
mA
ICC3
Operating current (READ)
C = 0.1VCC / 0.9.VCC at 20 MHz,
Q = open
ICC4
ICC5
ICC6
ICC7
VIL
Operating current (PP)
Operating current (WRSR)
Operating current (SE)
Operating current (BE)
Input Low voltage
S = VCC
S = VCC
S = VCC
S = VCC
15
15
mA
mA
mA
mA
V
15
15
–0.5
0.3VCC
VIH
Input High voltage
0.7VCC VCC+0.4
0.4
V
VOL
VOH
Output Low voltage
Output High voltage
IOL = 1.6 mA
V
IOH = –100 μA
VCC–0.2
V
1. Only for products with process technology code X.
2. Preliminary data.
Table 16. Instruction times (device grade 6)
Test conditions specified in Table 10 and Table 12
Symbol Alt.
Parameter
Min
Typ
Max
Unit
tW
Write Status Register cycle time
5
15
ms
Page Program cycle time (256 bytes)
1.4
(1)
tPP
5
ms
0.4+
Page Program cycle time (n bytes)
n*1/256(2)
tSE
tBE
Sector Erase cycle time
Bulk Erase cycle time
0.65
1.7
3
6
s
s
1. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤n ≤
256).
2. tPP=2μs+8μs*[int(n-1)/2+1]+4μs*[int(n-1)/2]+2μs, in products with process technology code X and Y.
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NUMONYX [ NUMONYX B.V ]
