DC and AC parameters
M25P10-A
Table 18. AC characteristics (25 MHz operation, device grade 6 or 3)
Test conditions specified in Table 10 and Table 12
Symbol
Alt.
Parameter
Min
Typ
Max
Unit
Clock frequency for the following
fC
fR
fC
instructions: FAST_READ, PP, SE, BE, DP,
RES, WREN, WRDI, RDSR, WRSR
D.C.
25
20
MHz
Clock frequency for READ instructions
D.C.
18
18
0.1
0.1
10
10
5
MHz
ns
(1)
tCH
tCLH Clock High time
tCLL Clock Low time
(1)
tCL
ns
(2)
tCLCH
Clock Rise time(3) (peak to peak)
V/ns
V/ns
ns
(2)
tCHCL
Clock Fall time(3) (peak to peak)
tCSS S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
tDSU Data In Setup time
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL
ns
ns
tDH
Data In Hold time
5
ns
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
10
10
100
ns
ns
tCSH S Deselect time
ns
(2)
tSHQZ
tDIS
tV
Output Disable time
15
15
ns
tCLQV
tCLQX
tHLCH
tCHHH
tHHCH
tCHHL
Clock Low to Output Valid
Output Hold time
ns
tHO
0
ns
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD to Output Low-Z
10
10
10
10
ns
ns
ns
ns
(2)
tHHQX
tLZ
15
20
ns
(2)
tHLQZ
tHZ
HOLD to Output High-Z
ns
(4)
tWHSL
Write Protect Setup time
Write Protect Hold time
20
ns
(4)
tSHWL
100
ns
(2)
tDP
S High to Deep Power-down mode
3
µs
S High to Standby mode without Read
Electronic Signature
(2)
tRES1
3 or 30(5)
µs
µs
S High to Standby mode with Read
Electronic Signature
tRES2
1.8 or 30(5)
(2)
1. tCH + tCL must be greater than or equal to 1/ fC.
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
5. It is 30 µs in devices produced with the ‘X’ and ‘Y’ process technology (grade 3 devices are only produced
using the ‘X’ process technology). Details of how to find the process letter on the device marking are given
in the application note AN1995.
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