M25P10-A
DC and AC parameters
(1)
Table 17. Instruction times (device grade 3)
Test conditions specified in Table 10 and Table 12
Symbol Alt.
Parameter
Min
Typ(2)(3)
Max(3) Unit
tW
Write Status Register cycle time
8
15
ms
Page Program cycle time (256 bytes)
1.5
(4)
tPP
5
ms
0.4+
n*1.1/256
Page Program cycle time (n bytes)
tSE
tBE
Sector Erase cycle time
Bulk Erase cycle time
1
3
s
s
4.5
10
1. Only for products with process technology code X.
2. At 85 °C.
3. Preliminary data.
4. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤n ≤
256).
39/51