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JS48F4400P0Z0C0 参数 Datasheet PDF下载

JS48F4400P0Z0C0图片预览
型号: JS48F4400P0Z0C0
PDF下载: 下载PDF文件 查看货源
内容描述: StrataFlash㈢蜂窝内存 [StrataFlash㈢ Cellular Memory]
分类和应用: 蜂窝
文件页数/大小: 139 页 / 2133 K
品牌: NUMONYX [ NUMONYX B.V ]
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Numonyx™ StrataFlash® Cellular Memory (M18)  
Figure 45: Operating Mode with Illegal Command Sequence Example  
Address [A]  
WE# [W]  
Partition A  
Partition B  
Partition A  
Partition A  
OE# [G]  
Data [D/Q]  
0x20  
0xFF  
0xD0  
SR[7:0]  
8.7.1  
Read Operation During Program Buffer fill  
Due to the large buffer size of devices, the system interrupt latency may be impacted  
during the buffer fill phase of a buffered programming operation. Please refer to the  
relevant Application Note listed in Section 1.4, “Additional Information” on page 7 to  
implement a software solution for your system.  
8.8  
Read-to-Write and Write-to-Read Bus Transitions  
Consecutive read and write bus cycles must be properly separated from each other to  
avoid bus contention. These cycle separation specs are described in the sections below.  
8.8.1  
8.8.2  
Write to Asynchronous read transition  
To transition from a bus write to an asynchronous read operation, either CE# or ADV#  
must be toggled after WE# goes high.  
Write to synchronous read transition  
To transition from a bus write to a synchronous read operation, either CE# or ADV#  
must be toggled after WE# goes high. In addition, W19 (tWHCH -WE# high to CLK high)  
must be met.  
8.8.3  
8.8.4  
Asynchronous/Synchronous read to write transition  
To transition from a asynchronous/synchronous read to a write operation, either CE# or  
ADV# must be toggled after OE# goes high.  
Bus write with active clock  
To perform a bus write when the device is in synchronous mode and the clock is active,  
W21 (tVHWL- ADV# High to WE# Low) or W22 (tCHWL -Clock high to WE# low) must be  
met.  
April 2008  
309823-10  
Datasheet  
75