®
Numonyx™ StrataFlash Embedded Memory (J3-65nm)
16.0
Program and erase characteristics
16.1
Program & Erase Specifications
Typical values measured at TA = +25 °C and nominal voltages
Table 25: Program-Erase Characteristics
(8)
Nbr.
Symbol
Parameter
Typ
Max
Unit
Notes
Conventional Word Programming
W200 Single word Main Array
Buffered Programming
t
150
456
µs
PROG/W
Aligned 32-Word BP Time (64 bytes)
Aligned 64-Word BP Time (128 bytes)
Aligned 128-Word BP Time (256 bytes)
Aligned 256-Word BP Time
176
216
272
396
700
716
900
W250
t
1140
1690
3016
µs
PROG/B
1
1
One Full Buffer(512-Word)
Erasing and Suspending
W501
W602
t
t
Erase time for 64-KW Main Array Block
0.8
—
4
s
ERS/MB
Erase or Erase-Resume command to Erase-suspend
command
500
µs
ERS/SUSP
W600
W601
t
t
Program suspend time
Erase suspend time
20
20
25
25
SUSP/P
SUSP/E
µs
Notes:
1.
Does not apply when in Byte Mode (Byte# at VIL)
Datasheet
48
December 2008
319942-02
NUMONYX [ NUMONYX B.V ]
