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JS28F256J3F105 参数 Datasheet PDF下载

JS28F256J3F105图片预览
型号: JS28F256J3F105
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 16MX16, 105ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56]
分类和应用: 光电二极管内存集成电路闪存
文件页数/大小: 66 页 / 711 K
品牌: NUMONYX [ NUMONYX B.V ]
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®
Numonyx™ StrataFlash Embedded Memory (J3-65nm)  
15.3  
AC Write Specification  
CEX low is defined as the falling edge of CE0, CE1, or CE2 that enables the device. CEX  
high is defined at the rising edge of CE0, CE1, or CE2 that disables the device. Chip  
enable truth table can be found in Table 6 on page 15  
Table 24: AC Write Specification  
Nbr.  
Symbol  
(t  
Parameter  
RP# High Recovery to WE# (CE ) Going Low  
Min  
Max  
Unit  
Notes  
W1  
W2  
t
)
150  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
1,2,3  
1,2,4  
1,2,4  
1,2  
PHWL PHEL  
X
t
t
t
t
t
t
t
t
t
t
t
t
(t  
)
CE (WE#) Low to WE# (CE ) Going Low  
ELWL  
WP  
WLEL  
X
X
W3  
Write Pulse Width  
50  
50  
50  
0
W4  
(t  
)
Data Setup to WE# (CE ) Going High  
DVWH DVEH  
X
W5  
(t  
)
Address Setup to WE# (CE ) Going High  
1,2  
AVWH AVEH  
X
W6  
(t  
)
CE (WE#) Hold from WE# (CE ) High  
1,2,  
WHEH  
WHDX  
EHWH  
X
X
W7  
(t  
)
Data Hold from WE# (CE ) High  
0
1,2,  
EHDX  
X
W8  
(t  
)
Address Hold from WE# (CE ) High  
X
0
1,2,  
WHAX EHAX  
WPH  
W9  
Write Pulse Width High  
20  
0
1,2,5  
1,2,3  
1,2,6  
1,2,7  
1,2,3,7,8  
W11  
W14  
W13  
W15  
(t  
)
)
V
Setup to WE# (CE ) Going High  
VPWH  
VPEH  
PEN  
X
(t  
Write Recovery before Read  
WE# (CE ) High to STS Going Low  
0
WHGL EHGL  
(t  
)
0
500  
WHRL EHRL  
X
V
Hold from Valid SRD, STS Going High  
PEN  
QVVL  
Notes:  
1.  
Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as during  
read-only operations. Refer to AC Characteristics–Read-Only Operations.  
2.  
3.  
4.  
A write operation can be initiated and terminated with either CE or WE#.  
X
Sampled, not 100% tested.  
Write pulse width (t ) is defined from CE or WE# going low (whichever goes low last) to CE or WE# going high  
WP  
X
X
(whichever goes high first). Hence, t  
= t  
= t  
X
WHWL  
WHGL  
= t  
= t  
.
WP  
WLWH  
ELEH  
WLEH  
ELWH  
5.  
Write pulse width high (t  
low (whichever goes low first). Hence, t  
) is defined from CE or WE# going high (whichever goes high first) to CE or WE# going  
WPH  
X
= t  
= t  
= t  
= t  
.
WPH  
EHEL  
WHEL  
EHWL  
6.  
7.  
8.  
For array access, t  
is required in addition to t  
for any accesses after a write.  
AVQV  
STS timings are based on STS configured in its RY/BY# default mode.  
V
should be held at V  
until determination of block erase, program, or lock-bit configuration success (SR[5:3,1]  
PEN  
PENH  
= 0).  
Datasheet  
46  
December 2008  
319942-02  
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