欢迎访问ic37.com |
会员登录 免费注册
发布采购

JS28F256J3F105 参数 Datasheet PDF下载

JS28F256J3F105图片预览
型号: JS28F256J3F105
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 16MX16, 105ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56]
分类和应用: 光电二极管内存集成电路闪存
文件页数/大小: 66 页 / 711 K
品牌: NUMONYX [ NUMONYX B.V ]
 浏览型号JS28F256J3F105的Datasheet PDF文件第22页浏览型号JS28F256J3F105的Datasheet PDF文件第23页浏览型号JS28F256J3F105的Datasheet PDF文件第24页浏览型号JS28F256J3F105的Datasheet PDF文件第25页浏览型号JS28F256J3F105的Datasheet PDF文件第27页浏览型号JS28F256J3F105的Datasheet PDF文件第28页浏览型号JS28F256J3F105的Datasheet PDF文件第29页浏览型号JS28F256J3F105的Datasheet PDF文件第30页  
®
Numonyx™ StrataFlash Embedded Memory (J3-65nm)  
9.0  
Erase Operation  
Flash erasing is performed on a block basis. An entire block is erased each time an  
erase command sequence is issued, and only one block is erased at a time. When a  
block is erased, all bits within that block read as logical ones. The following sections  
describe block erase operations in detail.  
9.1  
Block Erase  
Erasing a block changes ‘zeros’ to ‘ones. To change ones to zeros, a program operation  
must be performed (see Section 8.0, “Program operation”). Erasing is performed on a  
block basis - an entire block is erased each time an erase command sequence is issued.  
Once a block is fully erased, all addressable locations within that block read as logical  
ones (FFFFh). Only one block-erase operation can occur at a time, and is not permitted  
during a program suspend (see Figure 21, “Block Erase Flowchart” on page 61).  
Note:  
A block-erase operation requires the addressed block to be unlocked, and a valid  
voltage applied to VPEN throughout the block-erase operation. Otherwise, the  
operation will abort, setting the appropriate Status Register error bit(s).  
The Erase Confirm command latches the address of the block to be erased. The  
addressed block is preconditioned (programmed to all zeros), erased, and then verified.  
The read mode of the device is automatically changed to Read Status Register mode,  
and remains in effect until another read-mode command is issued.  
During a block-erase operation, STS and the Status Register indicates a busy status  
(SR.7 = 0). Upon completion, STS and the Status Register indicates a ready status  
(SR.7 = 1). The Status Register should be checked for any errors, then cleared. If any  
errors did occur, subsequent erase commands to the device are ignored unless the  
Status Register is cleared.  
The only valid commands during a block erase operation are Read Status and Erase  
Suspend. After the block-erase operation has completed, any valid command can be  
issued.  
Note:  
Issuing the Read Array command to the device while it is actively erasing causes  
subsequent reads from the device to output invalid data. Valid array data is output only  
after the block-erase operation has finished.  
Standby power levels are not realized until the block-erase operation has finished. Also,  
asserting RP# aborts the block-erase operation, and array contents at the addressed  
location are indeterminate. The addressed block should be erased before programming  
within the block is attempted.  
9.2  
Suspend/Resume  
An erase or programming operation can be suspended to perform other operations, and  
then subsequently resumed. Table 8 shows the Suspend and Resume command bus-  
cycles (see Figure 18, “Program/Erase Suspend/Resume Flowchart” on page 57).  
Note:  
All erase and programming operations require the addressed block to remain unlocked  
with a valid voltage applied to VPEN throughout the suspend operation. Otherwise, the  
block-erase or programming operation will abort, setting the appropriate Status  
Register error bit(s). Also, asserting RP# aborts suspended block-erase and  
programming operations, rendering array contents at the addressed location(s)  
indeterminate.  
Datasheet  
26  
December 2008  
319942-02  
 复制成功!