Command Interface
M29FxxxFT, M29FxxxFB
Table 6.
Program/Erase Times and Program/Erase Endurance Cycles, M29F160F
Parameter Min Typical Max
Unit
Chip Erase
—
—
—
—
—
—
25
0.8
20
11
24
12
—
120
6
s
Block Erase (64 KBytes)
Erase Suspend Latency Time
Program (Byte or Word)
s
25
µs
µs
s
200
120
60
—
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
Data Retention
s
100,000
20
cycles
years
—
—
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
tested.
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
and VCC after 100,000 program/erase cycles.
Block Erase and Erase Suspend Latency parameters: Maximum value measured at worst case conditions for both temperature
and VCC
.
Table 7.
Program/Erase Times and Program/Erase Endurance Cycles, M29F800F
Parameter Min Typical Max
Unit
Chip Erase
—
—
—
—
—
—
12
0.8
20
11
12
6
60
6
s
Block Erase (64 KBytes)
Erase Suspend Latency Time
Program (Byte or Word)
s
25
200
—
30
—
—
µs
µs
s
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
Data Retention
s
100,000
20
—
—
cycles
years
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
tested.
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
and VCC after 100,000 program/erase cycles.
Block Erase and Erase Suspend Latency parameter: Maximum value measured at worst case conditions for both temperature
and VCC
.
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NUMONYX [ NUMONYX B.V ]
