M29FxxxFT, M29FxxxFB
Command Interface
Table 8.
Program/Erase Times and Program/Erase Endurance Cycles, M29F400F
Parameter Min Typical Max
Unit
Chip Erase
—
—
—
—
—
—
6
30
6
s
Block Erase (64 KBytes)
Erase Suspend Latency Time
Program (Byte or Word)
0.8
20
11
6
s
25
200
—
15
—
—
µs
µs
s
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
Data Retention
3
s
100,000
20
—
—
cycles
years
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
tested.
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
and VCC after 100,000 program/erase cycles.
Block Erase and Erase Suspend Latency parameter: Maximum value measured at worst case conditions for both temperature
and VCC
.
Table 9.
Program/Erase Times and Program/Erase Endurance Cycles, M29F200F
Parameter Min Typical Max
Unit
Chip Erase
—
—
—
—
—
—
3
15
6
s
Block Erase (64 KBytes)
Erase Suspend Latency Time
Program (Byte or Word)
0.8
20
11
4
s
25
200
—
8
µs
µs
s
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
Data Retention
2
s
100,000
20
—
—
—
—
cycles
years
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
tested.
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
and VCC after 100,000 program/erase cycles.
Block Erase and Erase Suspend Latency parameter: Maximum value measured at worst case conditions for both temperature
and VCC
.
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NUMONYX [ NUMONYX B.V ]
