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DS90C383AMTD 参数 Datasheet PDF下载

DS90C383AMTD图片预览
型号: DS90C383AMTD
PDF下载: 下载PDF文件 查看货源
内容描述: + 3.3V可编程LVDS发射器24位平板显示器( FPD )链路- 65 MHz的+ 3.3V LVDS发射器24位平板显示器( FPD )链路65兆赫 [+3.3V Programmable LVDS Transmitter 24-Bit Flat Panel Display (FPD) Link-65 MHz +3.3V LVDS Transmitter 24-Bit Flat Panel Display (FPD) Link-65 MHz]
分类和应用: 线路驱动器或接收器显示器驱动程序和接口接口集成电路光电二极管
文件页数/大小: 11 页 / 304 K
品牌: NSC [ NATIONAL SEMICONDUCTOR ]
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DS90C383A/DS90CF383A
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
)
CMOS/TTL Input Voltage
LVDS Driver Output Voltage
LVDS Output Short Circuit
Duration
Junction Temperature
Storage Temperature
Lead Temperature
(Soldering, 4 sec)
MTD56 (TSSOP) Package:
DS90C383A/DS90CF383A
−0.3V to +4V
−0.3V to (V
CC
+ 0.3V)
−0.3V to (V
CC
+ 0.3V)
Continuous
+150˚C
−65˚C to +150˚C
+260˚C
Package Derating:
DS90C383A/DS90CF383A 12.5 mW/˚C above +25˚C
ESD Rating
(HBM, 1.5 kΩ, 100 pF)
(EIAJ, 0Ω, 200 pF)
>
7 kV
>
500V
Recommended Operating
Conditions
Min Nom Max
Supply Voltage (V
CC
)
Operating Free Air
Temperature (T
A
)
Receiver Input Range
Supply Noise Voltage (V
CC
)
TxCLKIN frequency
−10 +25 +70
0
18
2.4
100
68
˚C
V
mV
PP
MHz
3.0
3.3
3.6
Units
V
Maximum Package Power Dissipation Capacity
@
25˚C
1.63 W
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
V
IH
V
IL
V
CL
I
IN
Parameter
High Level Input Voltage
Low Level Input Voltage
Input Clamp Voltage
Input Current
I
CL
= −18 mA
V
V
LVDS DC SPECIFICATIONS
V
OD
∆V
OD
V
OS
∆V
OS
I
OS
I
OZ
Differential Output Voltage
Change in V
OD
between
complimentary output states
Offset Voltage (Note 4)
Change in V
OS
between
complimentary output states
Output Short Circuit Current
Output
TRI-STATE
®
Current
V
OUT
= 0V, R
L
= 100Ω
Power Down = 0V,
V
OUT
= 0V or V
CC
R
L
= 100Ω,
C
L
= 5 pF,
Worst Case Pattern
(Figures 1, 4 )
R
L
= 100Ω,
C
L
= 5 pF,
16 Grayscale Pattern
(Figures 2, 4 )
f = 32.5 MHz
f = 37.5 MHz
f = 65 MHz
f = 32.5 MHz
f = 37.5 MHz
f = 65 MHz
−3.5
1.125
1.25
R
L
= 100Ω
250
345
450
35
1.375
35
−5
mV
mV
V
mV
mA
µA
IN
IN
Conditions
Min
2.0
GND
Typ
Max
V
CC
0.8
Units
V
V
V
µA
µA
CMOS/TTL DC SPECIFICATIONS
−0.79
+1.8
−10
0
−1.5
+10
= 0.4V, 2.5V or V
CC
= GND
±
1
±
10
TRANSMITTER SUPPLY CURRENT
ICCTW
Transmitter Supply Current
Worst Case
31
33
39
23
28
33
10
43
45
52
35
40
45
55
mA
mA
mA
mA
mA
mA
µA
ICCTG
Transmitter Supply Current
16 Grayscale
ICCTZ
Transmitter Supply Current
Power Down
Power Down = Low
Driver Outputs in TRI-STATE under
Power Down Mode
Note 1:
“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Note 2:
Typical values are given for V
CC
= 3.3V and T
A
= +25C.
Note 3:
Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground unless otherwise
specified (except V
OD
and
∆V
OD
).
Note 4:
V
OS
previously referred as V
CM
.
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