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30036-23 参数 Datasheet PDF下载

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型号: 30036-23
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内容描述: 的Geode ™ GXLV处理器系列的低功耗X86集成解决方案 [Geode⑩ GXLV Processor Series Low Power Integrated x86 Solutions]
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文件页数/大小: 247 页 / 4117 K
品牌: NSC [ National Semiconductor ]
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Integrated Functions (Continued)  
4.3.3 SDRAM Commands  
MRS The Mode Register command defines the specific  
mode of operation of the SDRAM. This definition includes  
the selection of burst length, burst type, and CAS latency.  
CAS latency is the delay, in clock cycles, between the reg-  
istration of a read command and the availability of the first  
piece of output data.  
This subsection discusses the SDRAM commands sup-  
ported by the memory controller. Table 4-12 summarizes  
these commands followed by detailed operational infor-  
mation regarding each command. Refer to SDRAM device  
specifications available from SDRAM manufacturers for  
more detailed information.  
The burst length is programmed by address bits MA[2:0],  
the burst type by address bit MA3 and the CAS latency by  
address bits MA[6:4].  
Table 4-12. Basic Command Truth Table  
The memory controller only supports a burst length of two  
and burst type of interleave.  
Name  
Command  
CS RAS CAS WE  
MRS  
PRE  
ACT  
Mode Register Set  
Bank Precharge  
L
L
L
L
L
L
L
H
H
L
L
The field value on MA[12:0] and BA[1:0] during the MRS  
cycle are as shown in Table 4-13.  
Bank activate/row-  
address entry  
H
PRE The precharge command is used to deactivate  
the open row in a particular component bank or the open  
row in all (2 or 4, device dependent) component banks.  
Address pin MA10 determines whether one or all compo-  
nent banks are to be precharged. In the case where only  
one component bank is to be precharged, BA[1:0] selects  
which bank. Once a component bank has been pre-  
charged, it is in the Idle state and must be activated prior  
to any read or write commands.  
WRT  
Column address  
entry/Write operation  
L
L
H
H
X
L
L
L
X
L
L
H
X
H
READ  
DESL  
Column address  
entry/Read operation  
Control input inhibit/  
No operation  
H
L
RFSH* CBR Refresh or Auto  
Refresh  
Note: *This command is CBR (CAS-before-RAS) refresh  
when CKE is high and self refresh when CKE is low.  
Table 4-13. Address Line Programming during MRS Cycles  
BA[1:0]  
MA[12:7]  
MA[6:4]  
MA3  
MA[2:0]  
00  
000000  
CAS Latency:  
1
001  
000 = Reserved  
010 = 2 CLK  
100 = 4 CLK  
110 = 6 CLK  
001 = 1 CLK  
011 = 3 CLK  
101 = 5 CLK  
111 = 7 CLK  
Burst type is always  
interleave.  
Burst length is always 2.  
128-bit transfer.  
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110  
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