SM5010 series
5010FN× series
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = −10 to +70°C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
2.2
–
typ
2.4
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.7V, I = 8mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 2.7V, I = 8mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.5
10
10
IL
V
V
= V
= V
–
–
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 3.6V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010FNA, FNC
f = 30MHz
–
–
8
16
20
Measurement cct 3, load cct 1,
INHN = open, C = 15pF
Current consumption
I
mA
DD
L
5010FND
f = 40MHz
10
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
100
4.2
3.1
2.2
13
250
4.83
3.57
2.53
14.3
12.1
14.3
16.5
18.7
18.7
kΩ
kΩ
UP
5010FNA
5010FNC
5010FND
5010FNA
5010FNC
5010FND
5010FNA
5010FNC
5010FND
3.57
2.63
1.87
11.7
9.9
R
f
C
11
G
11.7
13.5
15.3
15.3
13
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
pF
15
C
17
D
17
SEIKO NPC CORPORATION —12
NPC [ NIPPON PRECISION CIRCUITS INC ]
