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CF5010BN4 参数 Datasheet PDF下载

CF5010BN4图片预览
型号: CF5010BN4
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体振荡器模块集成电路 [Crystal Oscillator Module ICs]
分类和应用: 振荡器晶体振荡器
文件页数/大小: 25 页 / 167 K
品牌: NPC [ NIPPON PRECISION CIRCUITS INC ]
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SM5010 series  
5010EA× series  
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = 10 to +70°C unless otherwise noted.  
DD  
SS  
Rating  
typ  
2.4  
0.3  
Parameter  
Symbol  
Condition  
Unit  
min  
2.1  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
Q: Measurement cct 1, V = 2.7V, I = 2mA  
DD OH  
V
V
V
V
OH  
V
Q: Measurement cct 2, V = 2.7V, I = 2mA  
DD OL  
0.5  
OL  
V
INHN  
INHN  
2.0  
IH  
V
0.5  
8
IL  
5010EA1  
5010EA2  
4
Measurement cct 3, load cct 1,  
INHN = open, C = 15pF, f = 30MHz  
Current consumption  
I
mA  
DD  
L
2.5  
100  
200  
5
INHN pull-up resistance  
Feedback resistance  
R
Measurement cct 4  
Measurement cct 5  
40  
80  
250  
500  
kΩ  
kΩ  
UP2  
R
f
Oscillator amplifier output  
resistance  
R
Design value  
690  
820  
940  
D
C
9
10  
15  
11  
17  
G
Built-in capacitance  
Design value. A monitor pattern on a wafer is tested.  
pF  
C
13  
D
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = 40 to +85°C unless otherwise noted.  
DD  
SS  
Rating  
typ  
4.2  
0.3  
Parameter  
Symbol  
Condition  
Unit  
min  
3.9  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
Q: Measurement cct 1, V = 4.5V, I = 3.2mA  
DD OH  
V
V
V
V
OH  
V
Q: Measurement cct 2, V = 4.5V, I = 3.2mA  
DD OL  
0.4  
OL  
V
INHN  
INHN  
2.0  
IH  
V
0.8  
12  
IL  
5010EA1  
5010EA2  
5010EA1  
5010EA2  
6
Measurement cct 3, load cct 1,  
INHN = open, C = 15pF, f = 30MHz  
I
DD1  
L
5
10  
Current consumption  
mA  
9
18  
Measurement cct 3, load cct 1,  
INHN = open, C = 15pF, f = 40MHz  
I
DD2  
L
6
12  
INHN pull-up resistance  
Feedback resistance  
R
Measurement cct 4  
Measurement cct 5  
40  
80  
100  
200  
250  
500  
kΩ  
kΩ  
UP2  
R
f
Oscillator amplifier output  
resistance  
R
Design value  
690  
820  
940  
D
C
9
10  
15  
11  
17  
G
Built-in capacitance  
Design value. A monitor pattern on a wafer is tested.  
pF  
C
13  
D
SEIKO NPC CORPORATION —11  
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