SM5010 series
5010CL× series
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = −20 to +80°C unless otherwise noted.
DD
SS
Rating
typ
2.4
0.3
–
Parameter
Symbol
Condition
Unit
min
2.2
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.7V, I = 8mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 2.7V, I = 8mA
DD OL
–
0.4
–
OL
V
INHN
INHN
0.7V
IH
DD
V
–
–
–
0.3V
DD
IL
V
V
= V
= V
–
10
10
10
7
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 3.6V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010CL1
5010CL2
5010CL3
5010CL4
5010CL5
–
5
–
3.5
2.5
2
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 30MHz
Current consumption
I
–
5
mA
DD
L
–
4
–
2
4
Standby current
I
Measurement cct 6, INHN = LOW
Measurement cct 4
–
–
5
ꢀA
MΩ
kΩ
kΩ
ST
R
2
4
15
250
500
20
20
UP1
INHN pull-up resistance
Feedback resistance
Built-in capacitance
R
40
80
16
16
100
200
18
18
UP2
R
Measurement cct 5
f
C
G
Design value. A monitor pattern on a wafer is tested.
pF
C
D
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
DD
SS
Rating
typ
4.2
0.3
–
Parameter
Symbol
Condition
Unit
min
4.0
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 4.5V, I = 16mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 4.5V, I = 16mA
DD OL
–
0.4
–
OL
V
INHN
INHN
0.7V
IH
DD
V
–
–
–
0.3V
DD
IL
V
V
= V
= V
–
10
10
30
18
12
10
10
10
8
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 5.5V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010CL1
5010CL2
5010CL3
5010CL4
5010CL5
–
15
9
–
Measurement cct 3, load cct 1,
INHN = open, C = 50pF, f = 30MHz
Current consumption
I
–
6
mA
DD
L
–
5
–
5
Standby current
I
Measurement cct 6, INHN = LOW
Measurement cct 4
–
–
ꢀA
MΩ
kΩ
kΩ
ST
R
1
2
UP1
INHN pull-up resistance
Feedback resistance
Built-in capacitance
R
40
80
16
16
100
200
18
18
250
500
20
20
UP2
R
Measurement cct 5
f
C
G
Design value. A monitor pattern on a wafer is tested.
pF
C
D
SEIKO NPC CORPORATION —10