SM5010 series
5010FH× series
5V operation: V = 4.5 to 5.5V, V = 0V
DD
SS
30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
3.9
–
typ
4.2
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 4.5V, I = 4mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 4.5V, I = 4mA
DD OL
0.5
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.8
10
10
IL
V
V
= V
= V
–
–
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 5.5V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010FHA, FHC
f = 40MHz
–
–
–
13
15
17
26
30
34
Measurement cct 3, load cct 1,
INHN = open, C = 15pF
5010FHD
f = 50MHz
Current consumption
I
mA
DD
L
5010FHE
f = 60MHz
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
100
4.2
3.1
2.2
2.2
13
11
13
8
250
4.83
3.57
2.53
2.53
14.3
12.1
14.3
8.8
kΩ
kΩ
UP
5010FHA
5010FHC
5010FHD
5010FHE
5010FHA
5010FHC
5010FHD
5010FHE
5010FHA
5010FHC
5010FHD
5010FHE
3.57
2.63
1.87
1.87
11.7
9.9
R
f
C
G
11.7
7.2
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
pF
13.5
15.3
15.3
13.5
15
17
17
15
16.5
18.7
18.7
16.5
C
D
5010HN×, HK× series
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Q: Measurement cct 1, V = 4.5V, I = 16mA
Unit
min
3.9
–
typ
4.2
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
V
V
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 4.5V, I = 16mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.8
10
10
IL
V
V
= V
= V
–
–
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 5.5V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
Measurement cct 3, load cct 2,
INHN = open, C = 15pF, f = 50MHz
I
5010HK1
5010HN1
–
–
20
25
40
50
DD1
L
Current consumption
mA
Measurement cct 3, load cct 1,
INHN = open, C = 50pF, f = 50MHz
I
DD2
L
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
100
200
13
250
500
kΩ
kΩ
UP
R
f
C
11.7
15.3
14.3
18.7
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
pF
C
17
D
SEIKO NPC CORPORATION —14
NPC [ NIPPON PRECISION CIRCUITS INC ]
