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CF5010BN4 参数 Datasheet PDF下载

CF5010BN4图片预览
型号: CF5010BN4
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体振荡器模块集成电路 [Crystal Oscillator Module ICs]
分类和应用: 振荡器晶体振荡器
文件页数/大小: 25 页 / 167 K
品牌: NPC [ NIPPON PRECISION CIRCUITS INC ]
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SM5010 series  
5010FH× series  
5V operation: V = 4.5 to 5.5V, V = 0V  
DD  
SS  
30 f 50MHz: Ta = 20 to +80°C, 50 < f 60MHz: Ta = 15 to +75°C unless otherwise noted.  
Rating  
Parameter  
Symbol  
Condition  
Unit  
min  
3.9  
typ  
4.2  
0.3  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
Q: Measurement cct 1, V = 4.5V, I = 4mA  
DD OH  
V
V
V
V
OH  
V
Q: Measurement cct 2, V = 4.5V, I = 4mA  
DD OL  
0.5  
OL  
V
INHN  
INHN  
2.0  
IH  
V
0.8  
10  
10  
IL  
V
V
= V  
= V  
OH  
DD  
Q: Measurement cct 2, INHN = LOW,  
= 5.5V  
Output leakage current  
I
ꢀA  
Z
V
DD  
OL  
SS  
5010FHA, FHC  
f = 40MHz  
13  
15  
17  
26  
30  
34  
Measurement cct 3, load cct 1,  
INHN = open, C = 15pF  
5010FHD  
f = 50MHz  
Current consumption  
I
mA  
DD  
L
5010FHE  
f = 60MHz  
INHN pull-up resistance  
Feedback resistance  
R
Measurement cct 4  
Measurement cct 5  
40  
100  
4.2  
3.1  
2.2  
2.2  
13  
11  
13  
8
250  
4.83  
3.57  
2.53  
2.53  
14.3  
12.1  
14.3  
8.8  
kΩ  
kΩ  
UP  
5010FHA  
5010FHC  
5010FHD  
5010FHE  
5010FHA  
5010FHC  
5010FHD  
5010FHE  
5010FHA  
5010FHC  
5010FHD  
5010FHE  
3.57  
2.63  
1.87  
1.87  
11.7  
9.9  
R
f
C
G
11.7  
7.2  
Design value. A monitor pattern on a  
wafer is tested.  
Built-in capacitance  
pF  
13.5  
15.3  
15.3  
13.5  
15  
17  
17  
15  
16.5  
18.7  
18.7  
16.5  
C
D
5010HN×, HK× series  
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = 40 to +85°C unless otherwise noted.  
DD  
SS  
Rating  
Parameter  
Symbol  
Condition  
Q: Measurement cct 1, V = 4.5V, I = 16mA  
Unit  
min  
3.9  
typ  
4.2  
0.3  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
V
V
V
V
OH  
DD  
OH  
V
Q: Measurement cct 2, V = 4.5V, I = 16mA  
DD OL  
0.4  
OL  
V
INHN  
INHN  
2.0  
IH  
V
0.8  
10  
10  
IL  
V
V
= V  
= V  
OH  
DD  
Q: Measurement cct 2, INHN = LOW,  
= 5.5V  
Output leakage current  
I
ꢀA  
Z
V
DD  
OL  
SS  
Measurement cct 3, load cct 2,  
INHN = open, C = 15pF, f = 50MHz  
I
5010HK1  
5010HN1  
20  
25  
40  
50  
DD1  
L
Current consumption  
mA  
Measurement cct 3, load cct 1,  
INHN = open, C = 50pF, f = 50MHz  
I
DD2  
L
INHN pull-up resistance  
Feedback resistance  
R
Measurement cct 4  
Measurement cct 5  
40  
80  
100  
200  
13  
250  
500  
kΩ  
kΩ  
UP  
R
f
C
11.7  
15.3  
14.3  
18.7  
G
Built-in capacitance  
Design value. A monitor pattern on a wafer is tested.  
pF  
C
17  
D
SEIKO NPC CORPORATION —14  
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