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CF5010BN4 参数 Datasheet PDF下载

CF5010BN4图片预览
型号: CF5010BN4
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体振荡器模块集成电路 [Crystal Oscillator Module ICs]
分类和应用: 振荡器晶体振荡器
文件页数/大小: 25 页 / 167 K
品牌: NPC [ NIPPON PRECISION CIRCUITS INC ]
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SM5010 series  
5010AH×, BH× series  
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = 10 to +70°C unless otherwise noted.  
DD  
SS  
Rating  
typ  
2.4  
0.3  
Parameter  
Symbol  
Condition  
Q: Measurement cct 1, V = 2.7V, I = 2mA  
Unit  
min  
2.1  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
V
V
V
V
OH  
DD  
OH  
V
Q: Measurement cct 2, V = 2.7V, I = 2mA  
DD OL  
0.5  
OL  
V
INHN  
INHN  
2.0  
IH  
V
0.5  
10  
10  
6
IL  
V
V
= V  
= V  
OH  
DD  
Q: Measurement cct 2, INHN = LOW,  
= 3.6V  
Output leakage current  
I
ꢀA  
Z
V
DD  
OL  
SS  
5010×H1  
5010×H2  
5010×H3  
5010×H4  
3
2
4
Measurement cct 3, load cct 1,  
INHN = open, C = 15pF, f = 16MHz  
Current consumption  
I
mA  
DD  
L
1.5  
1.5  
100  
200  
3
2.5  
250  
500  
INHN pull-up resistance  
Feedback resistance  
R
Measurement cct 4  
Measurement cct 5  
40  
80  
kΩ  
kΩ  
UP2  
R
f
Oscillator amplifier output  
resistance  
R
Design value  
5010B××  
690  
820  
940  
D
5010A××  
5010B××  
5010A××  
5010B××  
26  
20  
26  
20  
29  
22  
29  
22  
32  
24  
32  
24  
C
G
Design value. A monitor pattern on a  
wafer is tested.  
Built-in capacitance  
pF  
C
D
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = 40 to +85°C unless otherwise noted.  
DD  
SS  
Rating  
Parameter  
Symbol  
Condition  
Q: Measurement cct 1, V = 4.5V, I = 4mA  
Unit  
min  
3.9  
typ  
4.2  
0.3  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
V
V
V
V
OH  
DD  
OH  
V
Q: Measurement cct 2, V = 4.5V, I = 4mA  
DD OL  
0.5  
OL  
V
INHN  
INHN  
2.0  
IH  
V
0.8  
10  
10  
18  
12  
10  
8
IL  
V
V
= V  
= V  
OH  
DD  
Q: Measurement cct 2, INHN = LOW,  
= 5.5V  
Output leakage current  
I
ꢀA  
Z
V
DD  
OL  
SS  
5010×H1  
5010×H2  
5010×H3  
5010×H4  
9
6
Measurement cct 3, load cct 1,  
INHN = open, C = 15pF, f = 30MHz  
Current consumption  
I
mA  
DD  
L
5
4
INHN pull-up resistance  
Feedback resistance  
R
Measurement cct 4  
Measurement cct 5  
40  
80  
100  
200  
250  
500  
kΩ  
kΩ  
UP2  
R
f
Oscillator amplifier output  
resistance  
R
Design value  
5010B××  
690  
820  
940  
D
5010A××  
5010B××  
5010A××  
5010B××  
26  
20  
26  
20  
29  
22  
29  
22  
32  
24  
32  
24  
C
G
Design value. A monitor pattern on a  
wafer is tested.  
Built-in capacitance  
pF  
C
D
SEIKO NPC CORPORATION —9  
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