PSMN3R5-80PS
Nexperia
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220
Table 6.
Symbol
Characteristics …continued
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
-
0.8
1.2
V
trr
reverse recovery time
recovered charge
IS = 25 A; dIS/dt = 100 A/µs;
VGS = 0 V; VDS = 20 V
-
-
63
-
-
ns
Qr
121
nC
[1] Measured 3 mm from package.
003aaf602
003aaf603
250
75
g
fs
(S)
I
D
(A)
200
50
150
100
50
25
T = 175
j
C
°
T = 25
C
°
j
0
0
0
20
40
60
80
0
2
4
6
V
(V)
GS
I
(A)
D
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aaf604
003aaf606
30
16000
R
(m
DSon
C
(pF)
)
Ω
C
iss
25
20
15
10
5
12000
C
rss
8000
4000
0
0
0
5
10
15
20
10-1
1
10
102
(V)
V
GS
V
(V)
GS
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
PSMN3R5-80PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 19 April 2011
7 of 15
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