PSMN3R5-80PS
Nexperia
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220
003aaf612
15
V
DS
R
DSon
(mΩ)
12.5
I
D
V
(V) = 4.5
GS
10
7.5
5
V
GS(pl)
V
GS(th)
V
GS
Q
GS1
Q
GS2
5.5
Q
GS
Q
GD
6.0
2.5
Q
G(tot)
20.0
003aaa508
0
0
10
20
30
40
I (A)
D
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig 14. Gate charge waveform definitions
003aaf609
003aaf610
10
105
C
(pF)
V
(V)
GS
40V 64V
104
103
102
10
C
7.5
iss
V
= 16V
DS
5
2.5
0
C
oss
C
rss
0
40
80
120
160
(nC)
10-1
1
10
102
V
(V)
Q
DS
G
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN3R5-80PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 19 April 2011
9 of 15
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