PSMN3R5-80PS
Nexperia
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220
003aad280
003aad685
5
160
5.5
5
6
8
10
V
GS(th)
(V)
I
D
(A)
4
3
2
1
0
max
120
typ
4.5
80
40
0
min
V
(V) = 4
GS
0
0.5
1
1.5
2
−60
0
60
120
180
V
DS
(V)
T (°C)
j
Fig 9. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 10. Gate-source threshold voltage as a function of
junction temperature
03aa35
003aaf608
−1
10
3
I
D
a
(A)
min
typ
max
−2
−3
−4
−5
−6
10
2.4
10
10
10
10
1.8
1.2
0.6
0
0
2
4
6
-60
0
60
120
180
T ( C)
°
j
V
GS
(V)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normailzed drain-source on-state resistance
factor as a function of junction temperature
PSMN3R5-80PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 19 April 2011
8 of 15
NEXPERIA [ Nexperia ]
