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PSMN3R5-80PS 参数 Datasheet PDF下载

PSMN3R5-80PS图片预览
型号: PSMN3R5-80PS
PDF下载: 下载PDF文件 查看货源
内容描述: [N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220Production]
分类和应用:
文件页数/大小: 15 页 / 819 K
品牌: NEXPERIA [ Nexperia ]
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PSMN3R5-80PS  
Nexperia  
N-channel 80 V, 3.5 mstandard level MOSFET in TO-220  
6. Characteristics  
Table 6.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS drain-source breakdown  
voltage  
ID = 250 µA; VGS = 0 V; Tj = -55 °C  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
73  
80  
1
-
-
-
-
-
-
V
V
V
VGS(th)  
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C;  
see Figure 10  
ID = 1 mA; VDS = VGS; Tj = -55 °C;  
see Figure 10  
-
-
4.6  
4
V
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;  
see Figure 10; see Figure 11  
2
3
IDSS  
drain leakage current  
gate leakage current  
VDS = 80 V; VGS = 0 V; Tj = 25 °C  
VDS = 80 V; VGS = 0 V; Tj = 175 °C  
VGS = -20 V; VDS = 0 V; Tj = 25 °C  
VGS = 20 V; VDS = 0 V; Tj = 25 °C  
-
-
-
-
-
0.02  
10  
µA  
µA  
nA  
nA  
mΩ  
-
500  
100  
100  
8.4  
IGSS  
-
-
RDSon  
drain-source on-state  
resistance  
VGS = 10 V; ID = 25 A; Tj = 175 °C;  
see Figure 12  
7.2  
VGS = 10 V; ID = 25 A; Tj = 100 °C;  
see Figure 12  
-
-
-
5
5.8  
3.5  
-
mΩ  
mΩ  
[1]  
V
GS = 10 V; ID = 25 A; Tj = 25 °C;  
3
see Figure 13  
RG  
internal gate resistance (AC)  
f = 1 MHz  
0.9  
Dynamic characteristics  
QG(tot)  
total gate charge  
ID = 0 A; VDS = 0 V; VGS = 10 V  
-
-
-
-
135  
139  
51  
-
-
-
-
nC  
nC  
nC  
nC  
ID = 75 A; VDS = 40 V; VGS = 10 V;  
see Figure 14; see Figure 15  
QGS  
gate-source charge  
QGS(th)  
pre-threshold gate-source  
charge  
30  
QGS(th-pl)  
post-threshold gate-source  
charge  
-
21  
-
nC  
QGD  
gate-drain charge  
-
-
27  
-
-
nC  
V
VGS(pl)  
gate-source plateau voltage  
ID = 25 A; VDS = 40 V; see Figure 14;  
see Figure 15  
5.8  
Ciss  
Coss  
Crss  
td(on)  
tr  
input capacitance  
output capacitance  
reverse transfer capacitance  
turn-on delay time  
rise time  
VDS = 40 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; see Figure 16  
-
-
-
-
-
-
-
9961  
847  
401  
41  
-
-
-
-
-
-
-
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS = 40 V; RL = 0.53 ; VGS = 10 V;  
RG(ext) = 10 ; ID = 75 A  
43  
td(off)  
tf  
turn-off delay time  
fall time  
109  
44  
PSMN3R5-80PS  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 03 — 19 April 2011  
6 of 15  
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