PSMN3R5-80PS
Nexperia
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
80
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
80
V
-20
20
V
[1]
[1]
ID
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
-
-
-
120
120
803
A
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C;
A
see Figure 3
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tmb = 25 °C; see Figure 2
-
338
175
175
260
W
-55
-55
-
°C
°C
°C
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
[1]
IS
source current
peak source current
Tmb = 25 °C
-
-
120
803
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 80 V; RGS = 50 Ω; unclamped
-
676
mJ
[1] Continuous current is limited by package.
03aa16
003aaf615
120
240
ID
(A)
P
(%)
der
180
80
120
(1)
40
60
0
0
0
50
100
150
Tmb ( C)
200
0
50
100
150
200
°
T
mb
(°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R5-80PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 19 April 2011
3 of 15
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